DMN31D5UFZ-7B Pagpepresyo (USD) [868351pcs Stock]
- 1 pcs$0.04260
- 10,000 pcs$0.03785
- Bilang ng Bahagi:
- DMN31D5UFZ-7B
- Tagagawa:
- Diodes Incorporated
- Detalyadong Paglalarawan:
- MOSFET N-CH 30V .22A X2-DFN0606-.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - DIACs, SIDACs, Diode - RF, Transistors - IGBTs - Single, Mga module ng Power driver, Transistor - Bipolar (BJT) - Single, Thyristors - SCR - Mga Module and Diode - Mga Rectifier ng Bridge ...
- Kumpetensyang Pakinabang:
- We specialize in Diodes Incorporated DMN31D5UFZ-7B electronic components. DMN31D5UFZ-7B can be shipped within 24 hours after order. If you have any demands for DMN31D5UFZ-7B, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN31D5UFZ-7B Mga katangian ng produkto
Bilang ng Bahagi :
DMN31D5UFZ-7B
Tagagawa :
Diodes Incorporated
Paglalarawan :
MOSFET N-CH 30V .22A X2-DFN0606-
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
30V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
220mA (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
1.2V, 4.5V
Rds On (Max) @ Id, Vgs :
1.5 Ohm @ 100mA, 4.5V
Vgs (th) (Max) @ Id :
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
0.35nC @ 4.5V
Vgs (Max) :
±12V
Input Capacitance (Ciss) (Max) @ Vds :
22.2pF @ 15V
Tampok ng FET :
-
Power Dissipation (Max) :
393mW (Ta)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
X2-DFN0606-3
Pakete / Kaso :
3-XFDFN
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