STD1HN60K3 Pagpepresyo (USD) [182015pcs Stock]
- 1 pcs$0.20321
- 2,500 pcs$0.18089
- Bilang ng Bahagi:
- STD1HN60K3
- Tagagawa:
- STMicroelectronics
- Detalyadong Paglalarawan:
- MOSFET N-CH 600V 1.2A DPAK.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - DIACs, SIDACs, Mga Transistor - Bipolar (BJT) - RF, Transistor - IGBTs - Arrays, Diode - Rectifiers - Single, Transistor - Espesyal na Pakay, Diode - RF, Thyristors - Mga TRIAC and Mga module ng Power driver ...
- Kumpetensyang Pakinabang:
- We specialize in STMicroelectronics STD1HN60K3 electronic components. STD1HN60K3 can be shipped within 24 hours after order. If you have any demands for STD1HN60K3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STD1HN60K3 Mga katangian ng produkto
Bilang ng Bahagi :
STD1HN60K3
Tagagawa :
STMicroelectronics
Paglalarawan :
MOSFET N-CH 600V 1.2A DPAK
Serye :
SuperMESH3™
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
600V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
1.2A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
8 Ohm @ 600mA, 10V
Vgs (th) (Max) @ Id :
4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs :
9.5nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
140pF @ 50V
Tampok ng FET :
-
Power Dissipation (Max) :
27W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
DPAK
Pakete / Kaso :
TO-252-3, DPak (2 Leads + Tab), SC-63
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