[2619pcs Stock]
- Bilang ng Bahagi:
- GP1M010A080N
- Tagagawa:
- Global Power Technologies Group
- Detalyadong Paglalarawan:
- MOSFET N-CH 900V 10A TO3PN.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Mga FET, MOSFET - Single, Diode - Rectifiers - Single, Mga Transistor - FET, MOSFET - RF, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Diode - Mga Rectifier ng Bridge, Transistor - Bipolar (BJT) - Single, Diode - RF and Transistor - IGBTs - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in Global Power Technologies Group GP1M010A080N electronic components. GP1M010A080N can be shipped within 24 hours after order. If you have any demands for GP1M010A080N, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
GP1M010A080N Mga katangian ng produkto
Bilang ng Bahagi :
GP1M010A080N
Tagagawa :
Global Power Technologies Group
Paglalarawan :
MOSFET N-CH 900V 10A TO3PN
Serye :
-
Katayuan ng Bahagi :
Obsolete
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
900V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
10A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1.05 Ohm @ 5A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
53nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
2336pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
312W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
TO-3PN
Pakete / Kaso :
TO-3P-3, SC-65-3
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