STFI11N65M2 Pagpepresyo (USD) [12434pcs Stock]
- 1,500 pcs$0.41879
- Bilang ng Bahagi:
- STFI11N65M2
- Tagagawa:
- STMicroelectronics
- Detalyadong Paglalarawan:
- MOSFET N-CH 650V 7A I2PAKFP.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Arrays, Diode - RF, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Transistor - Programmable Unijunction, Thyristors - DIACs, SIDACs, Thyristors - SCR - Mga Module, Thyristors - Mga SCR and Diode - Rectifiers - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in STMicroelectronics STFI11N65M2 electronic components. STFI11N65M2 can be shipped within 24 hours after order. If you have any demands for STFI11N65M2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STFI11N65M2 Mga katangian ng produkto
Bilang ng Bahagi :
STFI11N65M2
Tagagawa :
STMicroelectronics
Paglalarawan :
MOSFET N-CH 650V 7A I2PAKFP
Serye :
MDmesh™ II Plus
Katayuan ng Bahagi :
Obsolete
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
650V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
7A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
670 mOhm @ 3.5A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
12.5nC @ 10V
Vgs (Max) :
±25V
Input Capacitance (Ciss) (Max) @ Vds :
410pF @ 100V
Tampok ng FET :
-
Power Dissipation (Max) :
25W (Tc)
Temperatura ng pagpapatakbo :
150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
I2PAKFP (TO-281)
Pakete / Kaso :
TO-262-3 Full Pack, I²Pak
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