NXP USA Inc. - PMN25EN,115

KEY Part #: K6415269

[12469pcs Stock]


    Bilang ng Bahagi:
    PMN25EN,115
    Tagagawa:
    NXP USA Inc.
    Detalyadong Paglalarawan:
    MOSFET N-CH 30V 6.2A 6TSOP.
    Manufacturer's standard lead time:
    Sa stock
    Buhay sa istante:
    Isang taon
    Chip Mula:
    Hong Kong
    RoHS:
    Paraan ng Pagbayad:
    Paraan ng pagpapadala:
    Mga Kategorya ng Pamilya:
    Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistors - IGBTs - Single, Transistor - IGBTs - Mga Module, Diode - Zener - Arrays, Transistor - Bipolar (BJT) - Single, Diode - Rectifiers - Single, Transistor - Programmable Unijunction, Thyristors - DIACs, SIDACs and Diode - RF ...
    Kumpetensyang Pakinabang:
    We specialize in NXP USA Inc. PMN25EN,115 electronic components. PMN25EN,115 can be shipped within 24 hours after order. If you have any demands for PMN25EN,115, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    PMN25EN,115 Mga katangian ng produkto

    Bilang ng Bahagi : PMN25EN,115
    Tagagawa : NXP USA Inc.
    Paglalarawan : MOSFET N-CH 30V 6.2A 6TSOP
    Serye : -
    Katayuan ng Bahagi : Obsolete
    Uri ng FET : N-Channel
    Teknolohiya : MOSFET (Metal Oxide)
    Drain sa Source Voltage (Vdss) : 30V
    Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 6.2A (Ta)
    Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 4.5V, 10V
    Rds On (Max) @ Id, Vgs : 23 mOhm @ 6.2A, 10V
    Vgs (th) (Max) @ Id : 2.5V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs : 11nC @ 10V
    Vgs (Max) : ±20V
    Input Capacitance (Ciss) (Max) @ Vds : 492pF @ 15V
    Tampok ng FET : -
    Power Dissipation (Max) : 540mW (Ta), 6.25W (Tc)
    Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)
    Uri ng Pag-mount : Surface Mount
    Package ng Tagabigay ng Device : 6-TSOP
    Pakete / Kaso : SC-74, SOT-457

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