Diodes Incorporated - ZXMN10A08DN8TA

KEY Part #: K6522883

ZXMN10A08DN8TA Pagpepresyo (USD) [178163pcs Stock]

  • 1 pcs$0.20864
  • 500 pcs$0.20761

Bilang ng Bahagi:
ZXMN10A08DN8TA
Tagagawa:
Diodes Incorporated
Detalyadong Paglalarawan:
MOSFET 2N-CH 100V 1.6A 8-SOIC.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Mga Rectifier ng Bridge, Mga Transistor - FET, MOSFET - RF, Transistor - IGBTs - Arrays, Transistors - IGBTs - Single, Diode - Zener - Arrays, Thyristors - DIACs, SIDACs, Transistor - Bipolar (BJT) - Single and Thyristors - Mga SCR ...
Kumpetensyang Pakinabang:
We specialize in Diodes Incorporated ZXMN10A08DN8TA electronic components. ZXMN10A08DN8TA can be shipped within 24 hours after order. If you have any demands for ZXMN10A08DN8TA, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

ZXMN10A08DN8TA Mga katangian ng produkto

Bilang ng Bahagi : ZXMN10A08DN8TA
Tagagawa : Diodes Incorporated
Paglalarawan : MOSFET 2N-CH 100V 1.6A 8-SOIC
Serye : -
Katayuan ng Bahagi : Active
Uri ng FET : 2 N-Channel (Dual)
Tampok ng FET : Logic Level Gate
Drain sa Source Voltage (Vdss) : 100V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 1.6A
Rds On (Max) @ Id, Vgs : 250 mOhm @ 3.2A, 10V
Vgs (th) (Max) @ Id : 2V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs : 7.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 405pF @ 50V
Kapangyarihan - Max : 1.25W
Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : 8-SOIC (0.154", 3.90mm Width)
Package ng Tagabigay ng Device : 8-SOP

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