SIHG23N60E-GE3 Pagpepresyo (USD) [18087pcs Stock]
- 1 pcs$2.27842
- 10 pcs$2.03383
- 100 pcs$1.66756
- 500 pcs$1.35031
- 1,000 pcs$1.08042
- Bilang ng Bahagi:
- SIHG23N60E-GE3
- Tagagawa:
- Vishay Siliconix
- Detalyadong Paglalarawan:
- MOSFET N-CH 600V 23A TO247AC.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Single, Pre-Biased, Transistor - Bipolar (BJT) - Single, Diode - Rectifiers - Single, Diode - Mga Rectifier ng Bridge, Thyristors - Mga SCR, Mga Transistor - Bipolar (BJT) - RF, Transistor - Bipolar (BJT) - Arrays and Transistor - Mga FET, MOSFET - Single ...
- Kumpetensyang Pakinabang:
- We specialize in Vishay Siliconix SIHG23N60E-GE3 electronic components. SIHG23N60E-GE3 can be shipped within 24 hours after order. If you have any demands for SIHG23N60E-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIHG23N60E-GE3 Mga katangian ng produkto
Bilang ng Bahagi :
SIHG23N60E-GE3
Tagagawa :
Vishay Siliconix
Paglalarawan :
MOSFET N-CH 600V 23A TO247AC
Serye :
E
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
600V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
23A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
158 mOhm @ 12A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
95nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
2418pF @ 100V
Tampok ng FET :
-
Power Dissipation (Max) :
227W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TA)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
TO-247AC
Pakete / Kaso :
TO-247-3
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