[1242pcs Stock]
- Bilang ng Bahagi:
- IPI023NE7N3 G
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET N-CH 75V 120A TO262-3.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - Mga SCR, Transistors - IGBTs - Single, Diode - Rectifiers - Arrays, Transistor - IGBTs - Arrays, Mga Transistor - FET, MOSFET - RF, Thyristors - Mga TRIAC, Thyristors - SCR - Mga Module and Mga module ng Power driver ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies IPI023NE7N3 G electronic components. IPI023NE7N3 G can be shipped within 24 hours after order. If you have any demands for IPI023NE7N3 G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPI023NE7N3 G Mga katangian ng produkto
Bilang ng Bahagi :
IPI023NE7N3 G
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET N-CH 75V 120A TO262-3
Serye :
OptiMOS™
Katayuan ng Bahagi :
Obsolete
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
75V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
120A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
-
Rds On (Max) @ Id, Vgs :
2.3 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id :
3.8V @ 273µA
Gate Charge (Qg) (Max) @ Vgs :
206nC @ 10V
Vgs (Max) :
-
Input Capacitance (Ciss) (Max) @ Vds :
14400pF @ 37.5V
Tampok ng FET :
-
Power Dissipation (Max) :
300W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 175°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
PG-TO262-3
Pakete / Kaso :
TO-262-3 Long Leads, I²Pak, TO-262AA
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