IXFQ30N60X Pagpepresyo (USD) [15904pcs Stock]
- 1 pcs$2.85133
- 10 pcs$2.54504
- 100 pcs$2.08693
- 500 pcs$1.68991
- 1,000 pcs$1.42522
- Bilang ng Bahagi:
- IXFQ30N60X
- Tagagawa:
- IXYS
- Detalyadong Paglalarawan:
- MOSFET N-CH 600V 30A TO3P.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - SCR - Mga Module, Diode - Mga Rectifier ng Bridge, Thyristors - DIACs, SIDACs, Thyristors - Mga SCR, Transistor - Bipolar (BJT) - Single, Transistor - Programmable Unijunction, Diode - Rectifiers - Single and Thyristors - Mga TRIAC ...
- Kumpetensyang Pakinabang:
- We specialize in IXYS IXFQ30N60X electronic components. IXFQ30N60X can be shipped within 24 hours after order. If you have any demands for IXFQ30N60X, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFQ30N60X Mga katangian ng produkto
Bilang ng Bahagi :
IXFQ30N60X
Tagagawa :
IXYS
Paglalarawan :
MOSFET N-CH 600V 30A TO3P
Serye :
HiPerFET™
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
600V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
30A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
155 mOhm @ 15A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs :
56nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
2270pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
500W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
TO-3P
Pakete / Kaso :
TO-3P-3, SC-65-3
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