IXFE39N90 Pagpepresyo (USD) [1892pcs Stock]
- 1 pcs$24.14734
- 10 pcs$24.02720
- Bilang ng Bahagi:
- IXFE39N90
- Tagagawa:
- IXYS
- Detalyadong Paglalarawan:
- MOSFET N-CH 900V 34A ISOPLUS227.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Single, Diode - Rectifiers - Arrays, Transistor - Bipolar (BJT) - Single, Pre-Biased, Mga Transistor - JFET, Transistor - IGBTs - Mga Module, Thyristors - Mga SCR, Diode - RF and Transistor - Programmable Unijunction ...
- Kumpetensyang Pakinabang:
- We specialize in IXYS IXFE39N90 electronic components. IXFE39N90 can be shipped within 24 hours after order. If you have any demands for IXFE39N90, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFE39N90 Mga katangian ng produkto
Bilang ng Bahagi :
IXFE39N90
Tagagawa :
IXYS
Paglalarawan :
MOSFET N-CH 900V 34A ISOPLUS227
Serye :
HiPerFET™
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
900V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
34A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
220 mOhm @ 19.5A, 10V
Vgs (th) (Max) @ Id :
5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs :
375nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
13400pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
580W (Tc)
Temperatura ng pagpapatakbo :
-40°C ~ 150°C (TJ)
Uri ng Pag-mount :
Chassis Mount
Package ng Tagabigay ng Device :
SOT-227B
Pakete / Kaso :
SOT-227-4, miniBLOC
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