SI4931DY-T1-GE3 Pagpepresyo (USD) [195156pcs Stock]
- 1 pcs$0.18953
- 2,500 pcs$0.16019
- Bilang ng Bahagi:
- SI4931DY-T1-GE3
- Tagagawa:
- Vishay Siliconix
- Detalyadong Paglalarawan:
- MOSFET 2P-CH 12V 6.7A 8SOIC.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - DIACs, SIDACs, Mga Transistor - Bipolar (BJT) - RF, Transistors - IGBTs - Single, Transistor - Bipolar (BJT) - Arrays, Thyristors - SCR - Mga Module, Mga Transistor - FET, MOSFET - RF, Diode - Mga Rectifier ng Bridge and Transistor - IGBTs - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in Vishay Siliconix SI4931DY-T1-GE3 electronic components. SI4931DY-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI4931DY-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI4931DY-T1-GE3 Mga katangian ng produkto
Bilang ng Bahagi :
SI4931DY-T1-GE3
Tagagawa :
Vishay Siliconix
Paglalarawan :
MOSFET 2P-CH 12V 6.7A 8SOIC
Serye :
TrenchFET®
Katayuan ng Bahagi :
Active
Uri ng FET :
2 P-Channel (Dual)
Tampok ng FET :
Logic Level Gate
Drain sa Source Voltage (Vdss) :
12V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
6.7A
Rds On (Max) @ Id, Vgs :
18 mOhm @ 8.9A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 350µA
Gate Charge (Qg) (Max) @ Vgs :
52nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds :
-
Kapangyarihan - Max :
1.1W
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
8-SOIC (0.154", 3.90mm Width)
Package ng Tagabigay ng Device :
8-SO
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