[8765pcs Stock]
- Bilang ng Bahagi:
- IRF8302MTR1PBF
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET N CH 30V 31A MX.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - Mga SCR, Diode - Zener - Single, Thyristors - Mga TRIAC, Transistor - Bipolar (BJT) - Single, Pre-Biased, Diode - Rectifiers - Arrays, Transistor - Programmable Unijunction, Diode - RF and Thyristors - SCR - Mga Module ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies IRF8302MTR1PBF electronic components. IRF8302MTR1PBF can be shipped within 24 hours after order. If you have any demands for IRF8302MTR1PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF8302MTR1PBF Mga katangian ng produkto
Bilang ng Bahagi :
IRF8302MTR1PBF
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET N CH 30V 31A MX
Serye :
HEXFET®
Katayuan ng Bahagi :
Obsolete
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
30V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
31A (Ta), 190A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
1.8 mOhm @ 31A, 10V
Vgs (th) (Max) @ Id :
2.35V @ 150µA
Gate Charge (Qg) (Max) @ Vgs :
53nC @ 4.5V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
6030pF @ 15V
Tampok ng FET :
-
Power Dissipation (Max) :
2.8W (Ta), 104W (Tc)
Temperatura ng pagpapatakbo :
-40°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
DIRECTFET™ MX
Pakete / Kaso :
DirectFET™ Isometric MX
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