TPN4R712MD,L1Q Pagpepresyo (USD) [342569pcs Stock]
- 1 pcs$0.11510
- 5,000 pcs$0.11453
- Bilang ng Bahagi:
- TPN4R712MD,L1Q
- Tagagawa:
- Toshiba Semiconductor and Storage
- Detalyadong Paglalarawan:
- MOSFET P-CH 20V 36A 8TSON ADV.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Programmable Unijunction, Diode - Rectifiers - Arrays, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - IGBTs - Single, Transistor - Bipolar (BJT) - Single, Transistor - IGBTs - Mga Module, Mga Transistor - Bipolar (BJT) - RF and Thyristors - DIACs, SIDACs ...
- Kumpetensyang Pakinabang:
- We specialize in Toshiba Semiconductor and Storage TPN4R712MD,L1Q electronic components. TPN4R712MD,L1Q can be shipped within 24 hours after order. If you have any demands for TPN4R712MD,L1Q, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TPN4R712MD,L1Q Mga katangian ng produkto
Bilang ng Bahagi :
TPN4R712MD,L1Q
Tagagawa :
Toshiba Semiconductor and Storage
Paglalarawan :
MOSFET P-CH 20V 36A 8TSON ADV
Serye :
U-MOSVI
Katayuan ng Bahagi :
Active
Uri ng FET :
P-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
20V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
36A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
2.5V, 4.5V
Rds On (Max) @ Id, Vgs :
4.7 mOhm @ 18A, 4.5V
Vgs (th) (Max) @ Id :
1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
65nC @ 5V
Vgs (Max) :
±12V
Input Capacitance (Ciss) (Max) @ Vds :
4300pF @ 10V
Tampok ng FET :
-
Power Dissipation (Max) :
42W (Tc)
Temperatura ng pagpapatakbo :
150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
8-TSON Advance (3.3x3.3)
Pakete / Kaso :
8-PowerVDFN
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