C2M0080120D Pagpepresyo (USD) [5343pcs Stock]
- 1 pcs$7.71225
- Bilang ng Bahagi:
- C2M0080120D
- Tagagawa:
- Cree/Wolfspeed
- Detalyadong Paglalarawan:
- MOSFET N-CH 1200V 31.6A TO247.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Mga Transistor - Bipolar (BJT) - RF, Diode - RF, Transistor - Bipolar (BJT) - Arrays, Diode - Zener - Single, Transistor - Bipolar (BJT) - Single, Pre-Biased, Thyristors - Mga TRIAC and Diode - Mga Rectifier ng Bridge ...
- Kumpetensyang Pakinabang:
- We specialize in Cree/Wolfspeed C2M0080120D electronic components. C2M0080120D can be shipped within 24 hours after order. If you have any demands for C2M0080120D, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
C2M0080120D Mga katangian ng produkto
Bilang ng Bahagi :
C2M0080120D
Tagagawa :
Cree/Wolfspeed
Paglalarawan :
MOSFET N-CH 1200V 31.6A TO247
Serye :
C2M™
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
SiCFET (Silicon Carbide)
Drain sa Source Voltage (Vdss) :
1200V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
36A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
20V
Rds On (Max) @ Id, Vgs :
98 mOhm @ 20A, 20V
Vgs (th) (Max) @ Id :
4V @ 5mA
Gate Charge (Qg) (Max) @ Vgs :
62nC @ 5V
Vgs (Max) :
+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds :
950pF @ 1000V
Tampok ng FET :
-
Power Dissipation (Max) :
192W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
TO-247-3
Pakete / Kaso :
TO-247-3
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