IXFT12N100 Pagpepresyo (USD) [6642pcs Stock]
- 1 pcs$7.17075
- 30 pcs$7.13508
- Bilang ng Bahagi:
- IXFT12N100
- Tagagawa:
- IXYS
- Detalyadong Paglalarawan:
- MOSFET N-CH 1000V 12A TO-268.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Mga FET, MOSFET - Single, Thyristors - SCR - Mga Module, Diode - Zener - Arrays, Transistor - Mga FET, MOSFET - Arrays, Diode - RF, Thyristors - DIACs, SIDACs, Mga Transistor - Bipolar (BJT) - RF and Transistors - IGBTs - Single ...
- Kumpetensyang Pakinabang:
- We specialize in IXYS IXFT12N100 electronic components. IXFT12N100 can be shipped within 24 hours after order. If you have any demands for IXFT12N100, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFT12N100 Mga katangian ng produkto
Bilang ng Bahagi :
IXFT12N100
Tagagawa :
IXYS
Paglalarawan :
MOSFET N-CH 1000V 12A TO-268
Serye :
HiPerFET™
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
1000V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
12A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1.05 Ohm @ 6A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs :
155nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
4000pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
300W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
TO-268
Pakete / Kaso :
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
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