Vishay Siliconix - SI7342DP-T1-GE3

KEY Part #: K6393588

SI7342DP-T1-GE3 Pagpepresyo (USD) [64262pcs Stock]

  • 1 pcs$0.61150
  • 3,000 pcs$0.60846

Bilang ng Bahagi:
SI7342DP-T1-GE3
Tagagawa:
Vishay Siliconix
Detalyadong Paglalarawan:
MOSFET N-CH 30V 9A PPAK SO-8.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Zener - Arrays, Transistor - Bipolar (BJT) - Single, Diode - RF, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Diode - Rectifiers - Single, Diode - Rectifiers - Arrays, Transistor - Bipolar (BJT) - Single, Pre-Biased and Transistor - Mga FET, MOSFET - Single ...
Kumpetensyang Pakinabang:
We specialize in Vishay Siliconix SI7342DP-T1-GE3 electronic components. SI7342DP-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI7342DP-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI7342DP-T1-GE3 Mga katangian ng produkto

Bilang ng Bahagi : SI7342DP-T1-GE3
Tagagawa : Vishay Siliconix
Paglalarawan : MOSFET N-CH 30V 9A PPAK SO-8
Serye : TrenchFET®
Katayuan ng Bahagi : Active
Uri ng FET : N-Channel
Teknolohiya : MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) : 30V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 9A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 8.25 mOhm @ 15A, 10V
Vgs (th) (Max) @ Id : 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 19nC @ 4.5V
Vgs (Max) : ±12V
Input Capacitance (Ciss) (Max) @ Vds : 1900pF @ 15V
Tampok ng FET : -
Power Dissipation (Max) : 1.8W (Ta)
Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)
Uri ng Pag-mount : Surface Mount
Package ng Tagabigay ng Device : PowerPAK® SO-8
Pakete / Kaso : PowerPAK® SO-8