Bilang ng Bahagi :
SCT20N120
Tagagawa :
STMicroelectronics
Paglalarawan :
MOSFET N-CH 1200V 20A HIP247
Katayuan ng Bahagi :
Active
Teknolohiya :
SiCFET (Silicon Carbide)
Drain sa Source Voltage (Vdss) :
1200V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
20A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
20V
Rds On (Max) @ Id, Vgs :
290 mOhm @ 10A, 20V
Vgs (th) (Max) @ Id :
3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
45nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds :
650pF @ 400V
Power Dissipation (Max) :
175W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 200°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
HiP247™