[807pcs Stock]
- Bilang ng Bahagi:
- FQN1N60CBU
- Tagagawa:
- ON Semiconductor
- Detalyadong Paglalarawan:
- MOSFET N-CH 600V 0.3A TO-92.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - IGBTs - Arrays, Mga module ng Power driver, Transistor - Bipolar (BJT) - Arrays, Transistor - Bipolar (BJT) - Single, Pre-Biased, Thyristors - DIACs, SIDACs, Thyristors - SCR - Mga Module, Transistor - Mga FET, MOSFET - Arrays and Diode - Zener - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in ON Semiconductor FQN1N60CBU electronic components. FQN1N60CBU can be shipped within 24 hours after order. If you have any demands for FQN1N60CBU, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FQN1N60CBU Mga katangian ng produkto
Bilang ng Bahagi :
FQN1N60CBU
Tagagawa :
ON Semiconductor
Paglalarawan :
MOSFET N-CH 600V 0.3A TO-92
Serye :
QFET®
Katayuan ng Bahagi :
Obsolete
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
600V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
300mA (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
11.5 Ohm @ 150mA, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
6.2nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
170pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
1W (Ta), 3W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
TO-92-3
Pakete / Kaso :
TO-226-3, TO-92-3 (TO-226AA)
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