DMN67D8LDW-13 Pagpepresyo (USD) [1325416pcs Stock]
- 1 pcs$0.02791
- 10,000 pcs$0.02506
- Bilang ng Bahagi:
- DMN67D8LDW-13
- Tagagawa:
- Diodes Incorporated
- Detalyadong Paglalarawan:
- MOSFET 2N-CH 60V 0.23A SOT363.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Transistor - Bipolar (BJT) - Single, Pre-Biased, Transistors - IGBTs - Single, Mga Transistor - FET, MOSFET - RF, Transistor - Bipolar (BJT) - Single, Diode - Mga Rectifier ng Bridge, Transistor - Mga FET, MOSFET - Arrays and Thyristors - SCR - Mga Module ...
- Kumpetensyang Pakinabang:
- We specialize in Diodes Incorporated DMN67D8LDW-13 electronic components. DMN67D8LDW-13 can be shipped within 24 hours after order. If you have any demands for DMN67D8LDW-13, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN67D8LDW-13 Mga katangian ng produkto
Bilang ng Bahagi :
DMN67D8LDW-13
Tagagawa :
Diodes Incorporated
Paglalarawan :
MOSFET 2N-CH 60V 0.23A SOT363
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
2 N-Channel (Dual)
Tampok ng FET :
Standard
Drain sa Source Voltage (Vdss) :
60V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
230mA
Rds On (Max) @ Id, Vgs :
5 Ohm @ 500mA, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
0.82nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
22pF @ 25V
Kapangyarihan - Max :
320mW
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
6-TSSOP, SC-88, SOT-363
Package ng Tagabigay ng Device :
SOT-363
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