IXFN80N60P3 Pagpepresyo (USD) [4410pcs Stock]
- 1 pcs$10.80416
- 10 pcs$9.99384
- 100 pcs$8.53528
- Bilang ng Bahagi:
- IXFN80N60P3
- Tagagawa:
- IXYS
- Detalyadong Paglalarawan:
- MOSFET N-CH 600V 66A SOT-227B.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Single, Transistors - IGBTs - Single, Transistor - Espesyal na Pakay, Thyristors - DIACs, SIDACs, Transistor - Programmable Unijunction, Diode - Rectifiers - Arrays, Diode - Zener - Single and Transistor - Bipolar (BJT) - Single, Pre-Biased ...
- Kumpetensyang Pakinabang:
- We specialize in IXYS IXFN80N60P3 electronic components. IXFN80N60P3 can be shipped within 24 hours after order. If you have any demands for IXFN80N60P3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFN80N60P3 Mga katangian ng produkto
Bilang ng Bahagi :
IXFN80N60P3
Tagagawa :
IXYS
Paglalarawan :
MOSFET N-CH 600V 66A SOT-227B
Serye :
HiPerFET™, Polar3™
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
600V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
66A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
70 mOhm @ 40A, 10V
Vgs (th) (Max) @ Id :
5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs :
190nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
13100pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
960W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Chassis Mount
Package ng Tagabigay ng Device :
SOT-227B
Pakete / Kaso :
SOT-227-4, miniBLOC
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