IPDD60R050G7XTMA1 Pagpepresyo (USD) [16371pcs Stock]
- 1 pcs$2.51737
- Bilang ng Bahagi:
- IPDD60R050G7XTMA1
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET NCH 650V 135A PG-HDSOP-10.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - IGBTs - Arrays, Transistors - IGBTs - Single, Transistor - Mga FET, MOSFET - Single, Thyristors - DIACs, SIDACs, Mga Transistor - JFET, Mga Transistor - FET, MOSFET - RF, Thyristors - Mga TRIAC and Thyristors - SCR - Mga Module ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies IPDD60R050G7XTMA1 electronic components. IPDD60R050G7XTMA1 can be shipped within 24 hours after order. If you have any demands for IPDD60R050G7XTMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPDD60R050G7XTMA1 Mga katangian ng produkto
Bilang ng Bahagi :
IPDD60R050G7XTMA1
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET NCH 650V 135A PG-HDSOP-10
Serye :
CoolMOS™ G7
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
600V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
47A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
50 mOhm @ 15.9A, 10V
Vgs (th) (Max) @ Id :
4V @ 800µA
Gate Charge (Qg) (Max) @ Vgs :
68nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
2670pF @ 400V
Tampok ng FET :
-
Power Dissipation (Max) :
278W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
PG-HDSOP-10-1
Pakete / Kaso :
10-PowerSOP Module
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