FDD4N60NZ Pagpepresyo (USD) [231873pcs Stock]
- 1 pcs$0.16631
- 2,500 pcs$0.16549
- Bilang ng Bahagi:
- FDD4N60NZ
- Tagagawa:
- ON Semiconductor
- Detalyadong Paglalarawan:
- MOSFET N CH 600V 3.4A DPAK.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - Mga TRIAC, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Transistor - Bipolar (BJT) - Arrays, Mga module ng Power driver, Transistor - Mga FET, MOSFET - Single, Thyristors - DIACs, SIDACs, Diode - Mga Rectifier ng Bridge and Diode - Zener - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in ON Semiconductor FDD4N60NZ electronic components. FDD4N60NZ can be shipped within 24 hours after order. If you have any demands for FDD4N60NZ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FDD4N60NZ Mga katangian ng produkto
Bilang ng Bahagi :
FDD4N60NZ
Tagagawa :
ON Semiconductor
Paglalarawan :
MOSFET N CH 600V 3.4A DPAK
Serye :
UniFET-II™
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
600V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
3.4A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
2.5 Ohm @ 1.7A, 10V
Vgs (th) (Max) @ Id :
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
10.8nC @ 10V
Vgs (Max) :
±25V
Input Capacitance (Ciss) (Max) @ Vds :
510pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
114W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
DPAK
Pakete / Kaso :
TO-252-3, DPak (2 Leads + Tab), SC-63
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