[843pcs Stock]
- Bilang ng Bahagi:
- SIB800EDK-T1-GE3
- Tagagawa:
- Vishay Siliconix
- Detalyadong Paglalarawan:
- MOSFET N-CH 20V 1.5A SC75-6.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Single, Mga Transistor - Bipolar (BJT) - RF, Mga module ng Power driver, Thyristors - SCR - Mga Module, Thyristors - Mga TRIAC, Thyristors - Mga SCR, Mga Transistor - FET, MOSFET - RF and Transistor - IGBTs - Mga Module ...
- Kumpetensyang Pakinabang:
- We specialize in Vishay Siliconix SIB800EDK-T1-GE3 electronic components. SIB800EDK-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIB800EDK-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIB800EDK-T1-GE3 Mga katangian ng produkto
Bilang ng Bahagi :
SIB800EDK-T1-GE3
Tagagawa :
Vishay Siliconix
Paglalarawan :
MOSFET N-CH 20V 1.5A SC75-6
Serye :
LITTLE FOOT®
Katayuan ng Bahagi :
Obsolete
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
20V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
1.5A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
1.5V, 4.5V
Rds On (Max) @ Id, Vgs :
225 mOhm @ 1.6A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
1.7nC @ 4.5V
Vgs (Max) :
±6V
Input Capacitance (Ciss) (Max) @ Vds :
-
Tampok ng FET :
Schottky Diode (Isolated)
Power Dissipation (Max) :
1.1W (Ta), 3.1W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
PowerPAK® SC-75-6L Single
Pakete / Kaso :
PowerPAK® SC-75-6L
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