IXKG25N80C Pagpepresyo (USD) [4446pcs Stock]
- 1 pcs$10.77064
- 25 pcs$10.71706
- Bilang ng Bahagi:
- IXKG25N80C
- Tagagawa:
- IXYS
- Detalyadong Paglalarawan:
- MOSFET N-CH 800V 25A ISO264.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Zener - Arrays, Transistors - IGBTs - Single, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Transistor - Mga FET, MOSFET - Arrays, Thyristors - Mga TRIAC, Thyristors - Mga SCR, Transistor - IGBTs - Arrays and Diode - Rectifiers - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in IXYS IXKG25N80C electronic components. IXKG25N80C can be shipped within 24 hours after order. If you have any demands for IXKG25N80C, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXKG25N80C Mga katangian ng produkto
Bilang ng Bahagi :
IXKG25N80C
Tagagawa :
IXYS
Paglalarawan :
MOSFET N-CH 800V 25A ISO264
Serye :
CoolMOS™
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
800V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
25A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
150 mOhm @ 9A, 10V
Vgs (th) (Max) @ Id :
4V @ 2mA
Gate Charge (Qg) (Max) @ Vgs :
166nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
-
Tampok ng FET :
-
Power Dissipation (Max) :
250W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
ISO264™
Pakete / Kaso :
ISO264™
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