IXYS - IXFN120N20

KEY Part #: K6398080

IXFN120N20 Pagpepresyo (USD) [3275pcs Stock]

  • 1 pcs$13.88510
  • 10 pcs$12.84221
  • 25 pcs$11.80118
  • 100 pcs$10.96812
  • 250 pcs$10.06569

Bilang ng Bahagi:
IXFN120N20
Tagagawa:
IXYS
Detalyadong Paglalarawan:
MOSFET N-CH 200V 120A SOT-227B.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Espesyal na Pakay, Transistors - IGBTs - Single, Mga Transistor - Bipolar (BJT) - RF, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Transistor - IGBTs - Arrays, Transistor - Programmable Unijunction, Thyristors - Mga SCR and Thyristors - SCR - Mga Module ...
Kumpetensyang Pakinabang:
We specialize in IXYS IXFN120N20 electronic components. IXFN120N20 can be shipped within 24 hours after order. If you have any demands for IXFN120N20, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFN120N20 Mga katangian ng produkto

Bilang ng Bahagi : IXFN120N20
Tagagawa : IXYS
Paglalarawan : MOSFET N-CH 200V 120A SOT-227B
Serye : HiPerFET™
Katayuan ng Bahagi : Active
Uri ng FET : N-Channel
Teknolohiya : MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) : 200V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 120A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 17 mOhm @ 500mA, 10V
Vgs (th) (Max) @ Id : 4V @ 8mA
Gate Charge (Qg) (Max) @ Vgs : 360nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 9100pF @ 25V
Tampok ng FET : -
Power Dissipation (Max) : 600W (Tc)
Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)
Uri ng Pag-mount : Chassis Mount
Package ng Tagabigay ng Device : SOT-227B
Pakete / Kaso : SOT-227-4, miniBLOC

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