FDB1D7N10CL7 Pagpepresyo (USD) [12273pcs Stock]
- 1 pcs$3.35783
- Bilang ng Bahagi:
- FDB1D7N10CL7
- Tagagawa:
- ON Semiconductor
- Detalyadong Paglalarawan:
- FET 100V 1.7 MOHM D2PAK.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - SCR - Mga Module, Transistor - Mga FET, MOSFET - Arrays, Diode - Zener - Arrays, Mga module ng Power driver, Transistors - IGBTs - Single, Mga Transistor - Bipolar (BJT) - RF, Thyristors - DIACs, SIDACs and Transistor - IGBTs - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in ON Semiconductor FDB1D7N10CL7 electronic components. FDB1D7N10CL7 can be shipped within 24 hours after order. If you have any demands for FDB1D7N10CL7, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FDB1D7N10CL7 Mga katangian ng produkto
Bilang ng Bahagi :
FDB1D7N10CL7
Tagagawa :
ON Semiconductor
Paglalarawan :
FET 100V 1.7 MOHM D2PAK
Serye :
PowerTrench®
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
100V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
268A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
6V, 15V
Rds On (Max) @ Id, Vgs :
1.65 mOhm @ 100A, 15V
Vgs (th) (Max) @ Id :
4V @ 700µA
Gate Charge (Qg) (Max) @ Vgs :
163nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
11600pF @ 50V
Tampok ng FET :
-
Power Dissipation (Max) :
250W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 175°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
D²PAK (TO-263)
Pakete / Kaso :
TO-263-7, D²Pak (6 Leads + Tab)
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