CSD25304W1015 Pagpepresyo (USD) [479105pcs Stock]
- 1 pcs$0.07720
- 3,000 pcs$0.06755
- Bilang ng Bahagi:
- CSD25304W1015
- Tagagawa:
- Texas Instruments
- Detalyadong Paglalarawan:
- MOSFET P-CH 20V 3A 6DSBGA.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - Mga TRIAC, Mga Transistor - JFET, Transistor - Espesyal na Pakay, Diode - Mga Rectifier ng Bridge, Thyristors - SCR - Mga Module, Mga module ng Power driver, Transistor - IGBTs - Arrays and Diode - RF ...
- Kumpetensyang Pakinabang:
- We specialize in Texas Instruments CSD25304W1015 electronic components. CSD25304W1015 can be shipped within 24 hours after order. If you have any demands for CSD25304W1015, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
CSD25304W1015 Mga katangian ng produkto
Bilang ng Bahagi :
CSD25304W1015
Tagagawa :
Texas Instruments
Paglalarawan :
MOSFET P-CH 20V 3A 6DSBGA
Serye :
NexFET™
Katayuan ng Bahagi :
Active
Uri ng FET :
P-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
20V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
3A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
1.8V, 4.5V
Rds On (Max) @ Id, Vgs :
32.5 mOhm @ 1.5A, 4.5V
Vgs (th) (Max) @ Id :
1.15V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
4.4nC @ 4.5V
Vgs (Max) :
±8V
Input Capacitance (Ciss) (Max) @ Vds :
595pF @ 10V
Tampok ng FET :
-
Power Dissipation (Max) :
750mW (Ta)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
6-DSBGA
Pakete / Kaso :
6-UFBGA, DSBGA
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