TSM120NA03CR RLG Pagpepresyo (USD) [454516pcs Stock]
- 1 pcs$0.08138
- Bilang ng Bahagi:
- TSM120NA03CR RLG
- Tagagawa:
- Taiwan Semiconductor Corporation
- Detalyadong Paglalarawan:
- MOSFET N-CH 30V 39A 8PDFN.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - IGBTs - Mga Module, Diode - RF, Transistor - IGBTs - Arrays, Diode - Zener - Arrays, Mga Transistor - Bipolar (BJT) - RF, Transistor - Bipolar (BJT) - Single, Diode - Iba't ibang Kakayahan (Varicaps, Varactors and Transistor - Mga FET, MOSFET - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in Taiwan Semiconductor Corporation TSM120NA03CR RLG electronic components. TSM120NA03CR RLG can be shipped within 24 hours after order. If you have any demands for TSM120NA03CR RLG, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TSM120NA03CR RLG Mga katangian ng produkto
Bilang ng Bahagi :
TSM120NA03CR RLG
Tagagawa :
Taiwan Semiconductor Corporation
Paglalarawan :
MOSFET N-CH 30V 39A 8PDFN
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
30V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
39A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
11.7 mOhm @ 11A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
9.2nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
562pF @ 15V
Tampok ng FET :
-
Power Dissipation (Max) :
33W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
8-PDFN (5x6)
Pakete / Kaso :
8-PowerTDFN
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