[4045pcs Stock]
- Bilang ng Bahagi:
- APTM10DHM09T3G
- Tagagawa:
- Microsemi Corporation
- Detalyadong Paglalarawan:
- MOSFET 2N-CH 100V 139A SP3.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Transistor - Bipolar (BJT) - Single, Pre-Biased, Thyristors - SCR - Mga Module, Thyristors - Mga TRIAC, Transistor - IGBTs - Arrays, Mga Transistor - JFET, Thyristors - DIACs, SIDACs and Thyristors - Mga SCR ...
- Kumpetensyang Pakinabang:
- We specialize in Microsemi Corporation APTM10DHM09T3G electronic components. APTM10DHM09T3G can be shipped within 24 hours after order. If you have any demands for APTM10DHM09T3G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
APTM10DHM09T3G Mga katangian ng produkto
Bilang ng Bahagi :
APTM10DHM09T3G
Tagagawa :
Microsemi Corporation
Paglalarawan :
MOSFET 2N-CH 100V 139A SP3
Serye :
POWER MOS V®
Katayuan ng Bahagi :
Obsolete
Uri ng FET :
2 N-Channel (Dual) Asymmetrical
Tampok ng FET :
Standard
Drain sa Source Voltage (Vdss) :
100V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
139A
Rds On (Max) @ Id, Vgs :
10 mOhm @ 69.5A, 10V
Vgs (th) (Max) @ Id :
4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs :
350nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
9875pF @ 25V
Kapangyarihan - Max :
390W
Temperatura ng pagpapatakbo :
-40°C ~ 150°C (TJ)
Uri ng Pag-mount :
Chassis Mount
Pakete / Kaso :
SP3
Package ng Tagabigay ng Device :
SP3
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