Vishay Siliconix - SI4816DY-T1-GE3

KEY Part #: K6524036

[3966pcs Stock]


    Bilang ng Bahagi:
    SI4816DY-T1-GE3
    Tagagawa:
    Vishay Siliconix
    Detalyadong Paglalarawan:
    MOSFET 2N-CH 30V 5.3A 8-SOIC.
    Manufacturer's standard lead time:
    Sa stock
    Buhay sa istante:
    Isang taon
    Chip Mula:
    Hong Kong
    RoHS:
    Paraan ng Pagbayad:
    Paraan ng pagpapadala:
    Mga Kategorya ng Pamilya:
    Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - RF, Thyristors - DIACs, SIDACs, Diode - Zener - Arrays, Transistor - Bipolar (BJT) - Single, Mga Transistor - FET, MOSFET - RF, Diode - Rectifiers - Arrays, Transistor - Espesyal na Pakay and Transistor - Bipolar (BJT) - Arrays ...
    Kumpetensyang Pakinabang:
    We specialize in Vishay Siliconix SI4816DY-T1-GE3 electronic components. SI4816DY-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI4816DY-T1-GE3, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    SI4816DY-T1-GE3 Mga katangian ng produkto

    Bilang ng Bahagi : SI4816DY-T1-GE3
    Tagagawa : Vishay Siliconix
    Paglalarawan : MOSFET 2N-CH 30V 5.3A 8-SOIC
    Serye : LITTLE FOOT®
    Katayuan ng Bahagi : Obsolete
    Uri ng FET : 2 N-Channel (Half Bridge)
    Tampok ng FET : Logic Level Gate
    Drain sa Source Voltage (Vdss) : 30V
    Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 5.3A, 7.7A
    Rds On (Max) @ Id, Vgs : 22 mOhm @ 6.3A, 10V
    Vgs (th) (Max) @ Id : 2V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs : 12nC @ 5V
    Input Capacitance (Ciss) (Max) @ Vds : -
    Kapangyarihan - Max : 1W, 1.25W
    Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)
    Uri ng Pag-mount : Surface Mount
    Pakete / Kaso : 8-SOIC (0.154", 3.90mm Width)
    Package ng Tagabigay ng Device : 8-SO

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