IXTA08N100P Pagpepresyo (USD) [55012pcs Stock]
- 1 pcs$0.82147
- 50 pcs$0.81739
- Bilang ng Bahagi:
- IXTA08N100P
- Tagagawa:
- IXYS
- Detalyadong Paglalarawan:
- MOSFET N-CH 1000V 0.8A TO-263.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - IGBTs - Mga Module, Transistor - Programmable Unijunction, Diode - Rectifiers - Single, Diode - RF, Mga Transistor - Bipolar (BJT) - RF, Transistor - Bipolar (BJT) - Arrays, Mga Transistor - FET, MOSFET - RF and Thyristors - Mga TRIAC ...
- Kumpetensyang Pakinabang:
- We specialize in IXYS IXTA08N100P electronic components. IXTA08N100P can be shipped within 24 hours after order. If you have any demands for IXTA08N100P, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTA08N100P Mga katangian ng produkto
Bilang ng Bahagi :
IXTA08N100P
Tagagawa :
IXYS
Paglalarawan :
MOSFET N-CH 1000V 0.8A TO-263
Serye :
Polar™
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
1000V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
800mA (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
20 Ohm @ 500mA, 10V
Vgs (th) (Max) @ Id :
4V @ 50µA
Gate Charge (Qg) (Max) @ Vgs :
11.3nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
240pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
42W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
TO-263 (IXTA)
Pakete / Kaso :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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