[2460pcs Stock]
- Bilang ng Bahagi:
- IRF6892STR1PBF
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET N-CH 25V 28A S3.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Mga Rectifier ng Bridge, Thyristors - Mga SCR, Mga Transistor - Bipolar (BJT) - RF, Mga module ng Power driver, Transistor - Bipolar (BJT) - Single, Pre-Biased, Transistors - IGBTs - Single, Transistor - IGBTs - Mga Module and Transistor - Programmable Unijunction ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies IRF6892STR1PBF electronic components. IRF6892STR1PBF can be shipped within 24 hours after order. If you have any demands for IRF6892STR1PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF6892STR1PBF Mga katangian ng produkto
Bilang ng Bahagi :
IRF6892STR1PBF
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET N-CH 25V 28A S3
Serye :
HEXFET®
Katayuan ng Bahagi :
Obsolete
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
25V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
28A (Ta), 125A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
1.7 mOhm @ 28A, 10V
Vgs (th) (Max) @ Id :
2.1V @ 50µA
Gate Charge (Qg) (Max) @ Vgs :
25nC @ 4.5V
Vgs (Max) :
±16V
Input Capacitance (Ciss) (Max) @ Vds :
2510pF @ 13V
Tampok ng FET :
-
Power Dissipation (Max) :
2.1W (Ta), 42W (Tc)
Temperatura ng pagpapatakbo :
-40°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
DIRECTFET™ S3C
Pakete / Kaso :
DirectFET™ Isometric S3C
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