Bilang ng Bahagi :
SSM6N55NU,LF
Tagagawa :
Toshiba Semiconductor and Storage
Paglalarawan :
MOSFET 2N-CH 30V 4A UDFN6
Katayuan ng Bahagi :
Active
Uri ng FET :
2 N-Channel (Dual)
Tampok ng FET :
Logic Level Gate
Drain sa Source Voltage (Vdss) :
30V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
4A
Rds On (Max) @ Id, Vgs :
46 mOhm @ 4A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs :
2.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds :
280pF @ 15V
Temperatura ng pagpapatakbo :
150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
6-WDFN Exposed Pad
Package ng Tagabigay ng Device :
6-µDFN(2x2)