IXFP56N30X3M Pagpepresyo (USD) [14212pcs Stock]
- 1 pcs$2.89981
- Bilang ng Bahagi:
- IXFP56N30X3M
- Tagagawa:
- IXYS
- Detalyadong Paglalarawan:
- FET N-CHANNEL.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Rectifiers - Single, Diode - RF, Transistor - IGBTs - Arrays, Transistors - IGBTs - Single, Transistor - Espesyal na Pakay, Transistor - Programmable Unijunction, Transistor - Mga FET, MOSFET - Single and Diode - Iba't ibang Kakayahan (Varicaps, Varactors ...
- Kumpetensyang Pakinabang:
- We specialize in IXYS IXFP56N30X3M electronic components. IXFP56N30X3M can be shipped within 24 hours after order. If you have any demands for IXFP56N30X3M, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFP56N30X3M Mga katangian ng produkto
Bilang ng Bahagi :
IXFP56N30X3M
Tagagawa :
IXYS
Paglalarawan :
FET N-CHANNEL
Serye :
HiPerFET™
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
300V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
56A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
27 mOhm @ 28A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs :
56nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
3750pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
36W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
TO-220 Isolated Tab
Pakete / Kaso :
TO-220-3 Full Pack, Isolated Tab
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