TK10A80E,S4X Pagpepresyo (USD) [38643pcs Stock]
- 1 pcs$1.17226
- 50 pcs$0.89682
- 100 pcs$0.80714
- 500 pcs$0.62778
- 1,000 pcs$0.52016
- Bilang ng Bahagi:
- TK10A80E,S4X
- Tagagawa:
- Toshiba Semiconductor and Storage
- Detalyadong Paglalarawan:
- MOSFET N-CH 800V TO220SIS.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Mga Rectifier ng Bridge, Diode - Rectifiers - Single, Transistor - IGBTs - Arrays, Diode - Rectifiers - Arrays, Mga Transistor - Bipolar (BJT) - RF, Thyristors - Mga SCR, Mga module ng Power driver and Diode - Zener - Single ...
- Kumpetensyang Pakinabang:
- We specialize in Toshiba Semiconductor and Storage TK10A80E,S4X electronic components. TK10A80E,S4X can be shipped within 24 hours after order. If you have any demands for TK10A80E,S4X, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK10A80E,S4X Mga katangian ng produkto
Bilang ng Bahagi :
TK10A80E,S4X
Tagagawa :
Toshiba Semiconductor and Storage
Paglalarawan :
MOSFET N-CH 800V TO220SIS
Serye :
π-MOSVIII
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
800V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
10A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1 Ohm @ 5A, 10V
Vgs (th) (Max) @ Id :
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
46nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
2000pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
50W (Tc)
Temperatura ng pagpapatakbo :
150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
TO-220SIS
Pakete / Kaso :
TO-220-3 Full Pack
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