IXFT80N65X2HV Pagpepresyo (USD) [9309pcs Stock]
- 1 pcs$4.42683
- Bilang ng Bahagi:
- IXFT80N65X2HV
- Tagagawa:
- IXYS
- Detalyadong Paglalarawan:
- MOSFET N-CH.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Mga Rectifier ng Bridge, Diode - Zener - Single, Diode - Zener - Arrays, Transistor - Bipolar (BJT) - Single, Pre-Biased, Transistor - IGBTs - Arrays, Thyristors - Mga TRIAC, Transistors - IGBTs - Single and Transistor - Mga FET, MOSFET - Single ...
- Kumpetensyang Pakinabang:
- We specialize in IXYS IXFT80N65X2HV electronic components. IXFT80N65X2HV can be shipped within 24 hours after order. If you have any demands for IXFT80N65X2HV, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFT80N65X2HV Mga katangian ng produkto
Bilang ng Bahagi :
IXFT80N65X2HV
Tagagawa :
IXYS
Paglalarawan :
MOSFET N-CH
Serye :
HiPerFET™
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
650V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
80A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
-
Vgs (th) (Max) @ Id :
5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs :
140nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
8300pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
890W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
TO-268HV
Pakete / Kaso :
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
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