APTM120H140FT1G Pagpepresyo (USD) [2247pcs Stock]
- 1 pcs$19.26652
- 100 pcs$19.03968
- Bilang ng Bahagi:
- APTM120H140FT1G
- Tagagawa:
- Microsemi Corporation
- Detalyadong Paglalarawan:
- MOSFET 4N-CH 1200V 8A SP1.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Mga FET, MOSFET - Arrays, Transistor - Programmable Unijunction, Mga Transistor - FET, MOSFET - RF, Transistor - IGBTs - Mga Module, Thyristors - Mga TRIAC, Diode - Rectifiers - Single, Transistor - Bipolar (BJT) - Single, Pre-Biased and Transistor - Mga FET, MOSFET - Single ...
- Kumpetensyang Pakinabang:
- We specialize in Microsemi Corporation APTM120H140FT1G electronic components. APTM120H140FT1G can be shipped within 24 hours after order. If you have any demands for APTM120H140FT1G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
APTM120H140FT1G Mga katangian ng produkto
Bilang ng Bahagi :
APTM120H140FT1G
Tagagawa :
Microsemi Corporation
Paglalarawan :
MOSFET 4N-CH 1200V 8A SP1
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
4 N-Channel (H-Bridge)
Tampok ng FET :
Standard
Drain sa Source Voltage (Vdss) :
1200V (1.2kV)
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
8A
Rds On (Max) @ Id, Vgs :
1.68 Ohm @ 7A, 10V
Vgs (th) (Max) @ Id :
5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
145nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
3812pF @ 25V
Kapangyarihan - Max :
208W
Temperatura ng pagpapatakbo :
-40°C ~ 150°C (TJ)
Uri ng Pag-mount :
Chassis Mount
Pakete / Kaso :
SP1
Package ng Tagabigay ng Device :
SP1
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