SI1035X-T1-GE3 Pagpepresyo (USD) [518123pcs Stock]
- 1 pcs$0.07139
- 3,000 pcs$0.06743
- Bilang ng Bahagi:
- SI1035X-T1-GE3
- Tagagawa:
- Vishay Siliconix
- Detalyadong Paglalarawan:
- MOSFET N/P-CH 20V SC-89.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - Bipolar (BJT) - RF, Thyristors - DIACs, SIDACs, Transistor - Bipolar (BJT) - Single, Pre-Biased, Diode - Rectifiers - Single, Diode - Rectifiers - Arrays, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Transistor - Bipolar (BJT) - Single and Transistor - Bipolar (BJT) - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in Vishay Siliconix SI1035X-T1-GE3 electronic components. SI1035X-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI1035X-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI1035X-T1-GE3 Mga katangian ng produkto
Bilang ng Bahagi :
SI1035X-T1-GE3
Tagagawa :
Vishay Siliconix
Paglalarawan :
MOSFET N/P-CH 20V SC-89
Serye :
TrenchFET®
Katayuan ng Bahagi :
Active
Uri ng FET :
N and P-Channel
Tampok ng FET :
Logic Level Gate
Drain sa Source Voltage (Vdss) :
20V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
180mA, 145mA
Rds On (Max) @ Id, Vgs :
5 Ohm @ 200mA, 4.5V
Vgs (th) (Max) @ Id :
400mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs :
0.75nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds :
-
Kapangyarihan - Max :
250mW
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
SOT-563, SOT-666
Package ng Tagabigay ng Device :
SC-89-6
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