[8866pcs Stock]
- Bilang ng Bahagi:
- PHX23NQ11T,127
- Tagagawa:
- NXP USA Inc.
- Detalyadong Paglalarawan:
- MOSFET N-CH 110V 16A SOT186A.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - DIACs, SIDACs, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Transistor - Bipolar (BJT) - Single, Transistor - IGBTs - Mga Module, Diode - Zener - Arrays, Diode - Zener - Single, Transistor - Espesyal na Pakay and Mga Transistor - FET, MOSFET - RF ...
- Kumpetensyang Pakinabang:
- We specialize in NXP USA Inc. PHX23NQ11T,127 electronic components. PHX23NQ11T,127 can be shipped within 24 hours after order. If you have any demands for PHX23NQ11T,127, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PHX23NQ11T,127 Mga katangian ng produkto
Bilang ng Bahagi :
PHX23NQ11T,127
Tagagawa :
NXP USA Inc.
Paglalarawan :
MOSFET N-CH 110V 16A SOT186A
Serye :
TrenchMOS™
Katayuan ng Bahagi :
Obsolete
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
110V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
16A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
70 mOhm @ 13A, 10V
Vgs (th) (Max) @ Id :
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
22nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
830pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
41.6W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
TO-220F
Pakete / Kaso :
TO-220-3 Full Pack, Isolated Tab
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