[802pcs Stock]
- Bilang ng Bahagi:
- FQA6N80_F109
- Tagagawa:
- ON Semiconductor
- Detalyadong Paglalarawan:
- MOSFET N-CH 800V 6.3A TO-3P.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - FET, MOSFET - RF, Transistor - IGBTs - Mga Module, Transistor - Mga FET, MOSFET - Arrays, Diode - Rectifiers - Single, Transistor - IGBTs - Arrays, Thyristors - Mga SCR, Mga Transistor - Bipolar (BJT) - RF and Thyristors - SCR - Mga Module ...
- Kumpetensyang Pakinabang:
- We specialize in ON Semiconductor FQA6N80_F109 electronic components. FQA6N80_F109 can be shipped within 24 hours after order. If you have any demands for FQA6N80_F109, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FQA6N80_F109 Mga katangian ng produkto
Bilang ng Bahagi :
FQA6N80_F109
Tagagawa :
ON Semiconductor
Paglalarawan :
MOSFET N-CH 800V 6.3A TO-3P
Serye :
QFET®
Katayuan ng Bahagi :
Obsolete
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
800V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
6.3A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1.95 Ohm @ 3.15A, 10V
Vgs (th) (Max) @ Id :
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
31nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
1500pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
185W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
TO-3P
Pakete / Kaso :
TO-3P-3, SC-65-3
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