Bilang ng Bahagi :
APTMC120HM17CT3AG
Tagagawa :
Microsemi Corporation
Paglalarawan :
POWER MODULE - SIC MOSFET
Katayuan ng Bahagi :
Active
Tampok ng FET :
Silicon Carbide (SiC)
Drain sa Source Voltage (Vdss) :
1200V (1.2kV)
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
147A (Tc)
Rds On (Max) @ Id, Vgs :
17 mOhm @ 100A, 20V
Vgs (th) (Max) @ Id :
4V @ 30mA
Gate Charge (Qg) (Max) @ Vgs :
332nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds :
5576pF @ 1000V
Kapangyarihan - Max :
750W
Temperatura ng pagpapatakbo :
-40°C ~ 175°C (TJ)
Uri ng Pag-mount :
Chassis Mount
Package ng Tagabigay ng Device :
SP3