Vishay Semiconductor Diodes Division - BYD13DGPHE3/73

KEY Part #: K6437473

BYD13DGPHE3/73 Pagpepresyo (USD) [780710pcs Stock]

  • 1 pcs$0.04738
  • 6,000 pcs$0.04332

Bilang ng Bahagi:
BYD13DGPHE3/73
Tagagawa:
Vishay Semiconductor Diodes Division
Detalyadong Paglalarawan:
DIODE GEN PURP 200V 1A DO204AL.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga module ng Power driver, Mga Transistor - Bipolar (BJT) - RF, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Diode - RF, Mga Transistor - JFET, Mga Transistor - FET, MOSFET - RF, Transistors - IGBTs - Single and Diode - Zener - Single ...
Kumpetensyang Pakinabang:
We specialize in Vishay Semiconductor Diodes Division BYD13DGPHE3/73 electronic components. BYD13DGPHE3/73 can be shipped within 24 hours after order. If you have any demands for BYD13DGPHE3/73, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BYD13DGPHE3/73 Mga katangian ng produkto

Bilang ng Bahagi : BYD13DGPHE3/73
Tagagawa : Vishay Semiconductor Diodes Division
Paglalarawan : DIODE GEN PURP 200V 1A DO204AL
Serye : -
Katayuan ng Bahagi : Active
Uri ng Diode : Standard
Boltahe - DC Reverse (Vr) (Max) : 200V
Kasalukuyang - Average na Rectified (Io) : 1A
Boltahe - Ipasa (Vf) (Max) @ Kung : -
Bilis : Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) : -
Kasalukuyang - Reverse Leakage @ Vr : 5µA @ 200V
Capacitance @ Vr, F : 8pF @ 4V, 1MHz
Uri ng Pag-mount : Through Hole
Pakete / Kaso : DO-204AL, DO-41, Axial
Package ng Tagabigay ng Device : DO-204AL (DO-41)
Operating temperatura - Junction : -65°C ~ 175°C

Maaari ka ring Makisalamuha sa
  • GL34G/1

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 400V 500MA DO213.

  • NSB8JT-E3/45

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 600V 8A TO263AB. Rectifiers 600 Volt 8.0 Amp 125 Amp IFSM

  • NSB8KT-E3/81

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 800V 8A TO263AB. Rectifiers 800 Volt 8.0 Amp 125 Amp IFSM

  • NSB8MT-E3/81

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 1KV 8A TO263AB. Rectifiers 1000 Volt 8.0 Amp 125 Amp IFSM

  • NSB8JT-E3/81

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 600V 8A TO263AB. Rectifiers RECOMMENDED ALT 625-NSB8JT-E3

  • MBRB10H100-E3/45

    Vishay Semiconductor Diodes Division

    DIODE SCHOTTKY 100V 10A TO263AB. Schottky Diodes & Rectifiers 100 Volt 10A Single 250 Amp IFSM