Vishay Semiconductor Diodes Division - NSB8JT-E3/81

KEY Part #: K6437522

NSB8JT-E3/81 Pagpepresyo (USD) [143207pcs Stock]

  • 1 pcs$0.25828
  • 800 pcs$0.24191
  • 1,600 pcs$0.19098
  • 2,400 pcs$0.17825
  • 5,600 pcs$0.16976

Bilang ng Bahagi:
NSB8JT-E3/81
Tagagawa:
Vishay Semiconductor Diodes Division
Detalyadong Paglalarawan:
DIODE GEN PURP 600V 8A TO263AB. Rectifiers RECOMMENDED ALT 625-NSB8JT-E3
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Mga Rectifier ng Bridge, Transistor - Mga FET, MOSFET - Single, Transistor - IGBTs - Arrays, Transistor - Bipolar (BJT) - Single, Pre-Biased, Thyristors - Mga SCR, Transistor - IGBTs - Mga Module, Thyristors - DIACs, SIDACs and Diode - Zener - Arrays ...
Kumpetensyang Pakinabang:
We specialize in Vishay Semiconductor Diodes Division NSB8JT-E3/81 electronic components. NSB8JT-E3/81 can be shipped within 24 hours after order. If you have any demands for NSB8JT-E3/81, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NSB8JT-E3/81 Mga katangian ng produkto

Bilang ng Bahagi : NSB8JT-E3/81
Tagagawa : Vishay Semiconductor Diodes Division
Paglalarawan : DIODE GEN PURP 600V 8A TO263AB
Serye : -
Katayuan ng Bahagi : Active
Uri ng Diode : Standard
Boltahe - DC Reverse (Vr) (Max) : 600V
Kasalukuyang - Average na Rectified (Io) : 8A
Boltahe - Ipasa (Vf) (Max) @ Kung : 1.1V @ 8A
Bilis : Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) : -
Kasalukuyang - Reverse Leakage @ Vr : 10µA @ 600V
Capacitance @ Vr, F : 55pF @ 4V, 1MHz
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package ng Tagabigay ng Device : TO-263AB
Operating temperatura - Junction : -55°C ~ 150°C

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