Vishay Semiconductor Diodes Division - RGP10JE-E3/54

KEY Part #: K6458252

RGP10JE-E3/54 Pagpepresyo (USD) [1010386pcs Stock]

  • 1 pcs$0.03661
  • 11,000 pcs$0.03347

Bilang ng Bahagi:
RGP10JE-E3/54
Tagagawa:
Vishay Semiconductor Diodes Division
Detalyadong Paglalarawan:
DIODE GEN PURP 600V 1A DO204AL. Diodes - General Purpose, Power, Switching 1.0A 600 Volt 250ns
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - DIACs, SIDACs, Transistors - IGBTs - Single, Mga Transistor - FET, MOSFET - RF, Transistor - Espesyal na Pakay, Mga Transistor - Bipolar (BJT) - RF, Transistor - Bipolar (BJT) - Single, Pre-Biased, Transistor - Bipolar (BJT) - Arrays and Diode - Zener - Arrays ...
Kumpetensyang Pakinabang:
We specialize in Vishay Semiconductor Diodes Division RGP10JE-E3/54 electronic components. RGP10JE-E3/54 can be shipped within 24 hours after order. If you have any demands for RGP10JE-E3/54, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RGP10JE-E3/54 Mga katangian ng produkto

Bilang ng Bahagi : RGP10JE-E3/54
Tagagawa : Vishay Semiconductor Diodes Division
Paglalarawan : DIODE GEN PURP 600V 1A DO204AL
Serye : SUPERECTIFIER®
Katayuan ng Bahagi : Active
Uri ng Diode : Standard
Boltahe - DC Reverse (Vr) (Max) : 600V
Kasalukuyang - Average na Rectified (Io) : 1A
Boltahe - Ipasa (Vf) (Max) @ Kung : 1.3V @ 1A
Bilis : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 250ns
Kasalukuyang - Reverse Leakage @ Vr : 5µA @ 600V
Capacitance @ Vr, F : 15pF @ 4V, 1MHz
Uri ng Pag-mount : Through Hole
Pakete / Kaso : DO-204AL, DO-41, Axial
Package ng Tagabigay ng Device : DO-204AL (DO-41)
Operating temperatura - Junction : -65°C ~ 175°C

Maaari ka ring Makisalamuha sa
  • 1SS250(TE85L,F)

    Toshiba Semiconductor and Storage

    DIODE GEN PURP 200V 100MA SC59. Diodes - General Purpose, Power, Switching 0.1A 200V Switching Diode S-Mini High

  • SE20AFB-M3/6A

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 100V 1.3A DO221AC. Rectifiers 2 Amp 100 Volts ESD PROTECTION

  • SE20AFD-M3/6B

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 200V 1.3A DO221AC. Rectifiers 2 Amp 200 volts ESD PROTECTION 13in

  • SE20AFB-M3/6B

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 100V 1.3A DO221AC. Rectifiers 2 Amp 100 volts ESD PROTECTION 13in

  • SE20AFG-M3/6B

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 400V 1.3A DO221AC. Rectifiers 2 Amp 400 volts ESD PROTECTION 13in

  • U1C-E3/5AT

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 150V 1A DO214AC. Rectifiers 1.0 Amp 150 Volt 30 Amp IFSM