IXFP130N10T Pagpepresyo (USD) [38171pcs Stock]
- 1 pcs$1.24792
- 50 pcs$1.24172
- Bilang ng Bahagi:
- IXFP130N10T
- Tagagawa:
- IXYS
- Detalyadong Paglalarawan:
- MOSFET N-CH 100V 130A TO-220.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - DIACs, SIDACs, Mga Transistor - FET, MOSFET - RF, Mga module ng Power driver, Thyristors - SCR - Mga Module, Thyristors - Mga SCR, Transistor - Programmable Unijunction, Transistor - Bipolar (BJT) - Arrays and Diode - Rectifiers - Single ...
- Kumpetensyang Pakinabang:
- We specialize in IXYS IXFP130N10T electronic components. IXFP130N10T can be shipped within 24 hours after order. If you have any demands for IXFP130N10T, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFP130N10T Mga katangian ng produkto
Bilang ng Bahagi :
IXFP130N10T
Tagagawa :
IXYS
Paglalarawan :
MOSFET N-CH 100V 130A TO-220
Serye :
TrenchMV™
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
100V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
130A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
9.1 mOhm @ 25A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
104nC @ 10V
Vgs (Max) :
-
Input Capacitance (Ciss) (Max) @ Vds :
5080pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
360W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 175°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
TO-220AB
Pakete / Kaso :
TO-220-3
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