Bilang ng Bahagi :
IPG20N06S4L26AATMA1
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET 2N-CH 8TDSON
Serye :
Automotive, AEC-Q101, OptiMOS™
Katayuan ng Bahagi :
Active
Uri ng FET :
2 N-Channel (Dual)
Tampok ng FET :
Logic Level Gate
Drain sa Source Voltage (Vdss) :
60V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
20A
Rds On (Max) @ Id, Vgs :
26 mOhm @ 17A, 10V
Vgs (th) (Max) @ Id :
2.2V @ 10µA
Gate Charge (Qg) (Max) @ Vgs :
20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
1430pF @ 25V
Kapangyarihan - Max :
33W
Temperatura ng pagpapatakbo :
-55°C ~ 175°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
8-PowerVDFN
Package ng Tagabigay ng Device :
PG-TDSON-8-10