SCT3060ALGC11 Pagpepresyo (USD) [7932pcs Stock]
- 1 pcs$4.56124
- Bilang ng Bahagi:
- SCT3060ALGC11
- Tagagawa:
- Rohm Semiconductor
- Detalyadong Paglalarawan:
- MOSFET NCH 650V 39A TO247N.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - Mga SCR, Mga module ng Power driver, Mga Transistor - FET, MOSFET - RF, Transistor - IGBTs - Arrays, Transistors - IGBTs - Single, Diode - RF, Diode - Rectifiers - Single and Mga Transistor - JFET ...
- Kumpetensyang Pakinabang:
- We specialize in Rohm Semiconductor SCT3060ALGC11 electronic components. SCT3060ALGC11 can be shipped within 24 hours after order. If you have any demands for SCT3060ALGC11, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SCT3060ALGC11 Mga katangian ng produkto
Bilang ng Bahagi :
SCT3060ALGC11
Tagagawa :
Rohm Semiconductor
Paglalarawan :
MOSFET NCH 650V 39A TO247N
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
SiCFET (Silicon Carbide)
Drain sa Source Voltage (Vdss) :
650V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
39A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
18V
Rds On (Max) @ Id, Vgs :
78 mOhm @ 13A, 18V
Vgs (th) (Max) @ Id :
5.6V @ 6.67mA
Gate Charge (Qg) (Max) @ Vgs :
58nC @ 18V
Vgs (Max) :
+22V, -4V
Input Capacitance (Ciss) (Max) @ Vds :
852pF @ 500V
Tampok ng FET :
-
Power Dissipation (Max) :
165W (Tc)
Temperatura ng pagpapatakbo :
175°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
TO-247N
Pakete / Kaso :
TO-247-3
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