ON Semiconductor - 2N7002ET7G

KEY Part #: K6421722

2N7002ET7G Pagpepresyo (USD) [3428205pcs Stock]

  • 1 pcs$0.01079

Bilang ng Bahagi:
2N7002ET7G
Tagagawa:
ON Semiconductor
Detalyadong Paglalarawan:
NFET SOT23 60V 115MA 7MO.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Mga FET, MOSFET - Single, Thyristors - DIACs, SIDACs, Transistor - Bipolar (BJT) - Single, Transistor - IGBTs - Arrays, Mga Transistor - Bipolar (BJT) - RF, Mga module ng Power driver, Transistor - Bipolar (BJT) - Arrays and Diode - Iba't ibang Kakayahan (Varicaps, Varactors ...
Kumpetensyang Pakinabang:
We specialize in ON Semiconductor 2N7002ET7G electronic components. 2N7002ET7G can be shipped within 24 hours after order. If you have any demands for 2N7002ET7G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

2N7002ET7G Mga katangian ng produkto

Bilang ng Bahagi : 2N7002ET7G
Tagagawa : ON Semiconductor
Paglalarawan : NFET SOT23 60V 115MA 7MO
Serye : -
Katayuan ng Bahagi : Active
Uri ng FET : N-Channel
Teknolohiya : MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) : 60V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 260mA (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 2.5 Ohm @ 240mA, 10V
Vgs (th) (Max) @ Id : 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 0.81nC @ 5V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 40pF @ 25V
Tampok ng FET : -
Power Dissipation (Max) : 300mW (Tj)
Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)
Uri ng Pag-mount : Surface Mount
Package ng Tagabigay ng Device : SOT-23-3 (TO-236)
Pakete / Kaso : TO-236-3, SC-59, SOT-23-3

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