FCH190N65F-F155 Pagpepresyo (USD) [31900pcs Stock]
- 1 pcs$1.29196
- Bilang ng Bahagi:
- FCH190N65F-F155
- Tagagawa:
- ON Semiconductor
- Detalyadong Paglalarawan:
- MOSFET N-CH 650V 20.6A TO247.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - RF, Mga Transistor - JFET, Thyristors - SCR - Mga Module, Mga Transistor - Bipolar (BJT) - RF, Transistor - Bipolar (BJT) - Single, Pre-Biased, Transistor - IGBTs - Arrays, Transistor - Espesyal na Pakay and Mga Transistor - FET, MOSFET - RF ...
- Kumpetensyang Pakinabang:
- We specialize in ON Semiconductor FCH190N65F-F155 electronic components. FCH190N65F-F155 can be shipped within 24 hours after order. If you have any demands for FCH190N65F-F155, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FCH190N65F-F155 Mga katangian ng produkto
Bilang ng Bahagi :
FCH190N65F-F155
Tagagawa :
ON Semiconductor
Paglalarawan :
MOSFET N-CH 650V 20.6A TO247
Serye :
FRFET®, SuperFET® II
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
650V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
20.6A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
190 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id :
5V @ 2mA
Gate Charge (Qg) (Max) @ Vgs :
78nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
3225pF @ 100V
Tampok ng FET :
-
Power Dissipation (Max) :
208W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
TO-247 Long Leads
Pakete / Kaso :
TO-247-3
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