SQA470EEJ-T1_GE3 Pagpepresyo (USD) [408942pcs Stock]
- 1 pcs$0.09045
- Bilang ng Bahagi:
- SQA470EEJ-T1_GE3
- Tagagawa:
- Vishay Siliconix
- Detalyadong Paglalarawan:
- MOSFET N-CHAN 30V POWERPAK SC-70.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - IGBTs - Arrays, Diode - Zener - Arrays, Mga Transistor - FET, MOSFET - RF, Diode - Rectifiers - Arrays, Diode - Mga Rectifier ng Bridge, Thyristors - Mga SCR, Transistor - Espesyal na Pakay and Transistor - Bipolar (BJT) - Single, Pre-Biased ...
- Kumpetensyang Pakinabang:
- We specialize in Vishay Siliconix SQA470EEJ-T1_GE3 electronic components. SQA470EEJ-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQA470EEJ-T1_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQA470EEJ-T1_GE3 Mga katangian ng produkto
Bilang ng Bahagi :
SQA470EEJ-T1_GE3
Tagagawa :
Vishay Siliconix
Paglalarawan :
MOSFET N-CHAN 30V POWERPAK SC-70
Serye :
Automotive, AEC-Q101, TrenchFET®
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
30V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
2.25A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
2.5V, 4.5V
Rds On (Max) @ Id, Vgs :
56 mOhm @ 2A, 4.5V
Vgs (th) (Max) @ Id :
1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
5.2nC @ 4.5V
Vgs (Max) :
±12V
Input Capacitance (Ciss) (Max) @ Vds :
453pF @ 20V
Tampok ng FET :
-
Power Dissipation (Max) :
13.6W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 175°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
PowerPAK® SC-70-6 Single
Pakete / Kaso :
PowerPAK® SC-70-6
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